UK Semiconductors: Previous Plenary Speakers


  • Andrea Fiore: (Eindhoven University of Technology, Netherlands) – Nano-opto-electro-mechanical Systems Based on III-V Semiconductors
  • Russell Dupuis: (Georgia Tech, USA) – The Growth and Properties of III-N Wide-Bandgap Semiconductor Devices OR An Anorak’s Guide to the Practical Use of Aluminium, Eka-Aluminium and Noxious Air
  • Anna Fontcuberta i Morral: (EPFL, Switzerland) – III-V Semiconductor Nanowires and Related Heterostructures
  • David Mitzi: (Duke University, USA) – Perovskites Semiconductors: Opportunities for Photovoltaics and Beyond.


  • Kenichi Nishi (QD Laser Inc., Japan) “Realization of superior characteristics in mass-produced quantum dot lasers”
  • Frank Koppens (ICFO, Barcelona, Spain) “Novel ultra-fast and nanoscale opto-electronic phenomena in 2d material heterostructures”
  • Shigefusa Chichibu (Tohoku University, Japan) “Wide bandgap III-nitride semiconductors for short wavelength light emitters”
  • Markus Amann (Technical University of Munich, Germany) “Novel InP- and GaSb-based light sources for the near infrared”


  • Michael Kneissl (Technical University of Berlin, Germany) “UV-LEDs – the long road towards shorter wavelengths”
  • Jerome Faist (ETH Zurich, Switzerland) “Quantum cascade laser combs at mid-infrared and terahertz frequencies”
  • Brian Bennett (Naval Research Laboratories, USA) “Antimonide-based compound semiconductors for low power electronics”
  • Hywel Morgan (University of Southampton, UK) “Common solid state electronics technologies for healthcare”


  • Stephen Forrest (University of Michigan, USA), “High intensity organic emission achieved by engineering excited states in organic thin films”
  • Lucia Sorba (Istituto Nanoscienze-CNR, Pisa, Italy), “Growth of III-V nanowires: from fundamental physics to device application”
  • Pascale Senellart (LPN-CNRS, France) “Cavity quantum electrodynamics with semiconductor quantum dots”
  • Rüdiger Quay (Fraunhofer Institute of Applied Solid-State Physics, Germany) “Gallium Nitride: The Prospects of Efficient Power Conversion for the Green (R)evolution”


  • Jerry Meyer (Naval Research Laboratory, USA) “A New Generation of Interband Cascade Lasers for the 3-6 µm Spectral Band”
  • Jean-Michel Gérard (CEA Grenoble, France) “Quantum Optics in Photonic Wires: Basics and Application to ‘Ultrabright’ Single-Photon Sources”
  • Pallab Bhattacharya (University of Michigan, USA) “Nitride-Based Quantum Dot Visible Lasers and Single Photon Sources”
  • Nir Tessler (Technion Haifa, Israel) “Organic Electronics: An Electrical Engineering Perspective of a Material Driven Field”



  • Thomas Südmeyer (ETH Zurich, Switzerland) “The MIXSEL: An Integrated Ultrafast Gigahertz Semiconductor Laser with Multi-Watt Average Output Power”
  • Peter Lohdahl (Technical University of Denmark) “Quantum Electrodynamics with Quantum Dots in Photonic Nanostructures”
  • Karl Leo (TU Dresden, Germany) “Organics – Bad Semiconductors for Good Devices”
  • Hideo Ohno (Tohoku University, Japan) “Manipulating Magnetism in Semiconductors”



  • Diana Huffaker (UCLA, USA) “Growth of III-Sb Diode Lasers on GaAs and Si”
  • Matty Caymax (IMEC, Belgium) “Issues and Solutions for Co-Integration of Ge and III-V MOSFETs for Beyond 22  nm Technology Generation CMOS”
  • Vladimir Bulović (MIT, USA) “Bright and Colourful LEDs Built with Nanostructured Semiconductors”
  • Paul Koenraad (TU Eindhoven, Netherlands) “Probing the Electronic and Magnetic Structure of a Single Impurity in a Semiconductor”



  • Umesh Mishra (UCSB, USA) “The New Face of GaN: Technology and Applications”
  • Takashi Asano (Kyoto University, Japan) “New Trends in Photonic Crystals”
  • Carlo Sirtori (Université Paris-Diderot Paris-7, France) “Unipolar Optoelectronics: Physics and Devices”
  • Thomas Kazior (Raytheon, USA) “Progress and Challenges in the Direct Monolithic Integration of III-V Devices and Si CMOS on Silicon Substrates”
  • Gabriel Bester (Max Planck Institute Stuttgart, Germany) “Atomistic Theory of Nanostructures: New Insights and Perspectives”



  • Mark Erikkson (University of Wisconsin-Madison, USA) “Spin Blockade and Coherence-Enhanced Transport in a Few-Electron Si/SiGe Double Quantum Dot”
  • Armando Rastelli (Leibniz Institute, Dresden, Germany) “Towards Position- and Wavelength-Controlled Quantum Dots for Single Dot Based Devices”
  • Aristide Lemaitre (CNRS-LPN, Marcoussis, France) “GaMnAs Semimagnetic Semiconductors and Mn-doped Quantum Dots”
  • Harold Gamble (Queens University Belfast, UK) “Post-CMOS Device Structures: Ge on Insulator”
  • Jonathan Finley (TU Munich, Germany) “Tunable Single Dot Nanosystems for Solid-State Cavity-QED”



  • Le-Si Dang (Université J. Fourier, Grenoble, France) “Bose-Einstein Condensation and Photon Lasing in Semiconductor Microcavities”
  • Thomas Ihn (ETH Zurich, Switzerland) “Transport and Noise in AFM-Defined Nanostructures”
  • Mitsuru Sugawara (Fujitsu/QD Laser, Japan) “Self-Assembled InAs Quantum Dot Lasers and Optical Amplifiers for Optical Communication”
  • Wladek Walukiewicz (Lawrence Berkeley Laboratories, USA) “Highly Mismatched Alloys: A New Class of Compound Semiconductors”



  • Eoin O’Reilly (Tyndall National Institute, Ireland) “Single- and Discrete-Mode Spectral Manipulation in Index-Patterned Fabry-Perot Lasers”
  • Yasuhiko Arakawa (RCAST, University of Tokyo, Japan) “Growth and Physics of GaN-based Quantum Dots for Application to Single Photon Sources”
  • Tomas Jungwirth (Academy of Sciences, Czech Republic) “Electric-Field Controlled Spintronic Devices”
  • Frank Koppens (TU Delft, Netherlands) “Single Electron Spin Resonance in Coupled Quantum Dots”